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Igbt Application Engineer

https://www.randstad.com Logo

Randstad

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地点:
China, Shanghai

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类别:
制造业

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合同类型:
未提供

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薪资:

400000.00 - 600000.00 CNY / 年
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职位描述:

Responsible for designing application solutions and providing technical support for power devices like IGBT, MOSFET, and SiC; involved with performance evaluation, technical documentation, and client interaction; join a specialized team in a leading automotive semiconductor company.

职位职责:

  • Design application solutions, provide technical support, and conduct failure analysis for IGBT/MOSFET/SiC power devices
  • set up test platforms to evaluate product performance
  • write technical documentation and participate in product definition
  • offer client consultation, training, and onsite guidance

要求:

  • Electrical/Microelectronics degree or above
  • over 3 years of experience in power semiconductor applications
  • familiar with IGBT/MOSFET characteristics and system-level testing
  • experience in automotive modules or photovoltaic/energy storage system design
  • knowledge of device simulation, thermal testing, and AECQ standards
  • strong communication skills
  • fluent written English

附加信息:

职位发布:
2025年5月14日

到期:
2025年6月28日

雇佣类型:
全职
工作类型:
现场工作
职位链接分享:
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