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In this position, the individual will be responsible to develop NAND memory trim, push the performance and reliability envelope of flash memory which is used in best-in-class high-density storage application. The individual will also work with memory system teams, such as consumer and enterprise SSD, iNAND and others, to design and develop system device features to improve system level performance and reliability. The individual will communicate & work with members from process, design, reliability, and system groups to ensure timely product device support, memory qualification, and ramp of volume production. In this position the candidate will be part of a team that sits at the hub of activity between storage business units, technology development, and manufacturing.
Job Responsibility:
Develop NAND memory trim, push the performance and reliability envelope of flash memory which is used in best-in-class high-density storage application
Work with memory system teams, such as consumer and enterprise SSD, iNAND and others, to design and develop system device features to improve system level performance and reliability
Communicate & work with members from process, design, reliability, and system groups to ensure timely product device support, memory qualification, and ramp of volume production
Part of a team that sits at the hub of activity between storage business units, technology development, and manufacturing
Requirements:
MS/Mtech degree + 3 years experience or Phd in Electrical Engineering, Applied Physics, or a related field
In-depth knowledge of semiconductor device physics, process, and reliability, as well as circuit design
NAND flash memory device and physics knowledge is plus
C/C++ Programming and Perl/Python Scripting knowledge is must
Excellent verbal and communication skills
Ability to analyze problem and work independently as required