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Within the BAE Systems MMIC and Foundry Capabilities group, based in Nashua, NH, we design, fabricate, and test high performance GaN and GaAs microwave and millimeter-wave Integrated Circuits (ICs) for the Space and Defense markets. We are looking for a summer intern to assist with the characterization and modeling of transistors at the heart of our GaN and GaAs ICs.
Job Responsibility:
Extract, validate, and document predictive compact transistor simulation models that accurately account for geometric, bias, temperature, and statistical variation from DC to W-band based on the industry standard MVSG and ASM-HEMT compact model formulations
Develop and assist with execution of test plans for a wide range of high-frequency on-wafer measurements over temperature including static and pulsed current-voltage, CW and pulsed S-Parameter, load- and source-pull, noise parameter, and intermodulation/mixer measurements
Requirements:
Pursuing a graduate Degree (MS or PhD) in Electrical Engineering
MUST be able to relocate to Southern NH area
MUST have reliable transportation to and from assigned work site
MUST be able to work full 40-hour work week
Nice to have:
Experience with Keysight's Advanced Design System software, Python programming, and semiconductor device physics is preferred
What we offer:
Networking with BAE Systems employees and interns
Informational sessions on a variety of topics exclusively for interns
Participate in BAE Systems' nationwide LEAP Internship & Co-op Program
Temporary employees working 20+ hours per week are eligible for medical benefits, the employee assistance program, and business travel accident insurance
Can elect to participate in the 401(k) savings plan