The role involves research and development of SiC power devices, including leading-edge, high-performance, and highly reliable power device research and development. The candidate will investigate and research the latest power semiconductor-related technologies, propose development themes, and promote the introduction of development tools as needed.
業務内容:
Research and development of SiC power devices
Leading-edge, high-performance, and highly reliable power device research and development
Investigation and research of the latest power semiconductor-related technologies and proposal of development themes
Promotion of the introduction of development tools as needed
応募資格:
Approximately 20 years of experience in semiconductor-related technologies and 10 years of experience in SiC power device research and development
In-depth knowledge of semiconductor device structure, operation principles, electrical characteristics, and evaluation techniques
Knowledge of basic processes and process integration required for high-performance device development
Expertise in power device reliability evaluation technology
Proficiency in EDA software tools for power device design
Familiarity with the latest power semiconductor technologies and broad industry connections
Strong information gathering ability regarding power semiconductor market trends
Excellent learning ability, problem-solving skills, communication skills, professional ethics, and teamwork spirit
Ability to travel overseas
Basic English communication, reading, and writing skills
